SPECS:
Brand | SAMSUNG |
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Series | 980 |
Model | MZ-V8V1T0B/AM |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
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Capacity | 1TB |
Memory Components | V-NAND MLC |
Interface | PCI-Express 3.0 x4, NVMe 1.4 |
Controller | Pablo |
Max Sequential Read | Up to 3500 MBps |
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Max Sequential Write | Up to 3000 MBps |
4KB Random Read | QD1: 17,000 IOPS QD32: 500,000 IOPS |
4KB Random Write | QD1: 54,000 IOPS QD32: 480,000 IOPS |
Terabytes Written (TBW) | 600TB |
MTBF | 1,500,000 hours |
Features | SOLID PERFORMANCE – Solid performance with Seq. Read/Write speeds up to 3,500/3,000 MB/s – Intelligent TurboWrite 2.0 maximize full potential performance with enlarged TurboWrite region up to 5.5 times – Host Memory Buffer (HMB) links DRAM in the host directly to the 980 to overcome performance restrain from DRAMless – Full Power Mode through Magician 6.3 allows the 980 to run at peak level for nonstop for a consistent high performance PROVEN RELIABILITY OPTIMIZED EFFICIENCY |
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Power Consumption (Idle) | 45 mW |
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Power Consumption (Active) | 4.6W |
Max Shock Resistance | 1500G & 0.5 ms (Half sine) |
Height | 2.38mm |
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Width | 22.15mm |
Depth | 80.15mm |